顯微光譜分析又稱微區光譜分析,是通過光學顯微鏡等輔助光學設備,采集微小區域的光信號進行樣品光譜分析的一種方法。
xianweiguangpufenxishiduibiputongguangpufenxieryan。tongchangputongguangpufenxishizhiputongguangxianguangpuyitongguoguangxianjiangguangxinhaodaoruguangpuzhizhong。danshiyouyuguangxianshoujideshifasanguang(一般光譜光纖數值孔徑為0.22),因此普通光纖光譜儀僅能采集較大空間的光信號。測試信號並不理想。
後hou來lai,人ren們men通tong過guo光guang學xue顯xian微wei鏡jing配pei合he光guang纖xian光guang譜pu儀yi進jin行xing樣yang品pin空kong間jian分fen辨bian分fen析xi使shi得de樣yang品pin的de空kong間jian分fen辨bian率lv得de到dao了le大da大da的de提ti高gao。為wei了le獲huo得de更geng高gao的de分fen辨bian率lv一yi方fang麵mian是shi要yao提ti高gao顯xian微wei鏡jing的de分fen辨bian率lv,另ling外wai一yi方fang麵mian是shi要yao提ti高gao光guang纖xian光guang譜pu儀yi的de性xing能neng和he兩liang者zhe之zhi間jian的de配pei合he性xing能neng。
目mu前qian市shi場chang上shang光guang纖xian光guang譜pu儀yi種zhong類lei繁fan多duo,選xuan擇ze一yi款kuan適shi合he的de光guang纖xian光guang譜pu儀yi至zhi關guan重zhong要yao。複fu享xiang光guang纖xian光guang譜pu儀yi提ti供gong的de設she備bei在zai市shi場chang上shang一yi直zhi在zai顯xian微wei光guang譜pu分fen析xi領ling域yu具ju有you良liang好hao的de口kou碑bei。如ru果guo您nin擁yong有you光guang學xue顯xian微wei鏡jing,那na麼me進jin行xing顯xian微wei光guang譜pu分fen析xi最zui簡jian單dan的de方fang法fa就jiu是shi配pei備bei複fu享xiang光guang纖xian光guang譜pu儀yi的de專zhuan用yong顯xian微wei鏡jing-光guang纖xian適shi配pei器qi對dui譜pu儀yi和he顯xian微wei鏡jing進jin行xing整zheng合he同tong時shi配pei合he複fu享xiang光guang纖xian光guang譜pu儀yi開kai發fa的de定ding製zhi軟ruan件jian。然ran後hou,您nin就jiu能neng輕qing輕qing鬆song鬆song的de用yong顯xian微wei鏡jing和he整zheng合he好hao的de光guang纖xian光guang譜pu儀yi係xi統tong對dui樣yang品pin進jin行xing信xin號hao分fen析xi。
一般來說,如果您擁有50倍以上的物鏡,在不做光闌修飾的情況下,能夠做到25微(wei)米(mi)見(jian)方(fang)區(qu)域(yu)的(de)顯(xian)微(wei)光(guang)譜(pu)分(fen)析(xi)。當(dang)然(ran),複(fu)享(xiang)還(hai)能(neng)夠(gou)為(wei)您(nin)提(ti)供(gong)更(geng)精(jing)細(xi)的(de)顯(xian)微(wei)光(guang)譜(pu)分(fen)析(xi)。通(tong)過(guo)複(fu)享(xiang)光(guang)纖(xian)光(guang)譜(pu)儀(yi)的(de)專(zhuan)利(li)技(ji)術(shu),顯(xian)微(wei)係(xi)統(tong)能(neng)將(jiang)光(guang)譜(pu)儀(yi)的(de)空(kong)間(jian)分(fen)辨(bian)率(lv)提(ti)高(gao)至(zhi)5微米見方。
普通光譜分析和顯微光譜分析已經具有專利技術的光譜分析對比表
普通光譜分析顯微光譜分析複享專利的顯微光譜分析
空間分辨率能力典型1X1mm2最小25X25um2最小5X5um2
角分辨能力無無有,詳見R6產品介紹
最大光譜波段200-2500nm380-780nm320-1100nm
製絨過程:
製絨是將電池片表麵刻蝕或腐蝕成不規則的粗糙表麵。由於入射光在電池片表麵多次反射和折射、增zeng加jia了le光guang的de吸xi收shou,提ti高gao了le電dian池chi片pian的de短duan路lu電dian流liu和he轉zhuan換huan效xiao率lv。此ci時shi,可ke以yi利li用yong測ce量liang反fan射she率lv來lai衡heng量liang電dian池chi片pian的de製zhi絨rong效xiao果guo。一yi般ban來lai說shuo,在zai製zhi絨rong完wan成cheng後hou,電dian池chi片pian的de反fan射she率lv在zai35%左右。
清洗過程:
zaizhirongguochenghou,xuyaoduidianchipianbiaomianjinxingyibandehuaxueqingxi。qingxihouhaiyaojinxingtuoshuichuli。cishi,keyiliyongceliangfanshelvlaihengliangdianchipianqingxixiaoguo。
PECVD過程
為了進一步減少表麵反射,提高電池的轉換效率,需要沉積一層SiN(氮化矽)減反射膜。現在工業生產中常采用PECVD設備製備減反射膜。PECVD即(ji)等(deng)離(li)子(zi)體(ti)增(zeng)強(qiang)型(xing)化(hua)學(xue)氣(qi)相(xiang)沉(chen)積(ji)。它(ta)的(de)技(ji)術(shu)原(yuan)理(li)是(shi)利(li)用(yong)低(di)溫(wen)等(deng)離(li)子(zi)體(ti)做(zuo)能(neng)量(liang)源(yuan),樣(yang)品(pin)置(zhi)於(yu)低(di)氣(qi)壓(ya)下(xia)輝(hui)光(guang)放(fang)電(dian)的(de)陰(yin)極(ji)上(shang),利(li)用(yong)輝(hui)光(guang)放(fang)電(dian)使(shi)樣(yang)品(pin)升(sheng)溫(wen)到(dao)預(yu)定(ding)的(de)溫(wen)度(du),然(ran)後(hou)通(tong)入(ru)適(shi)量(liang)的(de)反(fan)應(ying)氣(qi)體(ti)SiH4和NH3,qitijingyixiliehuaxuefanyinghedenglizitifanying,zaiyangpinbiaomianxingchenggutaibomo,jidanhuaguibomo。zaifanyingguochengzhong,keyishiyonggaofenbiandedenglizitijiankongyijinxingdenglizitifanyingdeyuanweijiankong。yibanqingkuangxia,shiyongPECVD方法沉積的薄膜厚度在70nm左右。完成PECVD鍍膜後,需要使用橢偏儀和反射率儀綜合衡量電池片的膜厚和反射率
封裝過程
zaizujiandebiaomianxuyaofengzhuangshangboli,qidaobaohudianchizujiandezuoyong。xianzaiyibanshiyongzengtouxingdeyahuabolijinxingfengzhuang。yahuabolidetouguolvjiangzhijieyingxiangdianchizujiandefadianxiaolv。yinci,xuyaoshiyongyahuabolitouguolvyiduifengzhuangdeyahuabolitouguolvjinxingjiance。
測試過程
weilehengliangdianchizujiandefadianxiaolv,xuyaoshiyongtaiyangguangmoniqizhaoshejinxingfadianxiaolvdeceshi。taiyangguangmoniqiyibanshiyongteshudemaichongxiandengguangyuan。youyumaichongxiandengguangyuanjuyoushiyongshouming,yinci,weilehuoquzhunquedexiaolvshuju,xuyaoduitaiyangguangmoniqidefusheqingkuangjinxingjiance。
手機版






